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HFA3134, HFA3135
Data Sheet February 1998 File Number 4445
Ultra High Frequency Matched Pair Transistors
The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation's complementary bipolar UHF-1X process. The NPN transistors exhibit an fT of 8.5GHz, while the PNP transistors have an fT of 7GHz. Both types exhibit low noise, making them ideal for high frequency amplifier and mixer applications. Both arrays are matched high frequency transistor pairs. The matching simplifies DC bias problems and it minimizes imbalances in differential amplifier configurations. Their high fT enables the design of UHF amplifiers which exhibit exceptional stability.
Features
* NPN Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . .8.5GHz * NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . 100 * NPN Noise Figure (50) at 1.0GHz . . . . . . . . . . . . . 2.6dB * PNP Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 7GHz * PNP Current Gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . . 57 * PNP Noise Figure (50) at 900MHz . . . . . . . . . . . . 4.6dB * Small Package (EIAJ-SC74 Compliant) . . . . . . . SOT23-6
Applications
* VHF/UHF Amplifiers * VHF/UHF Mixers
Ordering Information
PART NUMBER (BRAND) HFA3134IH96 (H04) HFA3135IH96 (H05) TEMP. RANGE (oC) -40 to 85 -40 to 85 PACKAGE 6 Ld SOT23 6 Ld SOT23 PKG. NO. P6.064 P6.064
* IF Converters * Synchronous Detectors
Pinouts
HFA3134 (SOT23) TOP VIEW HFA3135 (SOT23) TOP VIEW
1 Q1 2 3 Q2
6 5 4
1 Q1 2 3 Q2
6 5 4
4-450
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999
HFA3134, HFA3135
Absolute Maximum Ratings
Collector to Emitter Voltage (RB 10k to GND) . . . . . . . . . . . .11V Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . .12V Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 4.5V Collector Current . . . . . . . . . . . . . . . . . . . . . . . .14mA at TJ =150oC 26mA at TJ =125oC Base Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.7mA ESD Rating Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .400V (Per MIL-STD-883 Method 3015.7)
Thermal Information
Thermal Resistance (Typical, Note 1) JA (oC/W) SOT23-6 Package . . . . . . . . . . . . . . . . . . . . . . . . . . 350 Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . .175oC Maximum Junction Temperature (Plastic Package) . . . . . . . .150oC Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC Maximum Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . .300oC (Soldering 10s, Lead Tips Only)
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 85oC
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. JA is measured with the component mounted on an evaluation PC board in free air. 2. If a transistor is used in a diode configuration, the collector must be connected to the base to avoid exceeding the maximum base current specification.
Electrical Specifications
TA = 25oC TEST LEVEL (NOTE 3)
PARAMETER DC CHARACTERISTICS FOR HFA3134 (NPN) Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
V(BR)CBO V(BR)CEO V(BR)CER
IC = 10A, IE = 0 IC = 100A, IB = 0 IC = 100A, RB = 10k IE = 10A, IC = 0 VCE = 6V, IB = 0 VCB = 8V, IE = 0 VEB = 1V, IC = 0
A A A B A A B C
12 4 11 -5 -5 48 48 48 48 48 48 20
21 9 17 6 1 1 95 780 1.2 1.0 0.7 -1.5 80 87 90 96 96 100 2 30
5 5 250 1000 6 6 6 200 200 200 200 200 200 8 -
V V V V nA nA pA nA mV mV mV mV mV mV/oC
Emitter-to-Base Breakdown Voltage (Note 4) Collector-Cutoff-Current Collector-Cutoff-Current Emitter-Cutoff-Current (Note 5) Collector-to-Collector Leakage Collector-to-Emitter Saturation Voltage Base-to-Emitter Voltage (Note 5) Q1 to Q2 Base-to-Emitter Voltage Match (Note 5)
V(BR)EBO ICEO ICBO IEBO
VCE(SAT) VBE VBE
IC = 10mA, IB = 1mA IC = 10mA, VCE = 2V IC = 10mA, VCE = 2V IC = 1mA, VCE = 2V IC = 0.1mA, VCE = 2V
A A A A A C A A A A A A A A
Base-to-Emitter Voltage Drift DC Forward-Current Transfer Ratio (Note 5) hFE
IC = 10mA IC = 10mA, VCE = 2V IC = 1mA, VCE = 2V IC = 0.1mA, VCE = 2V IC = 10mA, VCE = 5V IC = 1mA, VCE = 5V IC = 0.1mA, VCE = 5V
Q1 to Q2 Current Transfer Ratio Match Early Voltage
hFE VA
1mA IC 10mA, 1V VCE 5V IC = 1mA, VCE = 3V
% V
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HFA3134, HFA3135
Electrical Specifications
TA = 25oC TEST LEVEL (NOTE 3)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
DYNAMIC CHARACTERISTICS FOR HFA3134 (NPN) Noise Figure NF f = 1.0GHz, IC = 10mA, 1V VCE 5V, ZS = 50 f = 1.0GHz, IC = 1mA, 1V VCE 5V, ZS = 50 Current Gain-Bandwidth Product (Note 5) Power Gain-Bandwidth Product Base-to-Emitter Capacitance Collector-to-Base Capacitance fT IC = 10mA, VCE = 5V IC = 1mA, VCE = 5V fMAX IC = 10mA, VCE = 5V VBE = -0.5V VCB = 3V TA = 25oC TEST LEVEL (NOTE 3) B B B B B B B 2.4 2.6 8.5 3 7.5 600 500 dB dB GHz GHz GHz fF fF
Electrical Specifications
PARAMETER DC CHARACTERISTICS FOR HFA3135 (PNP) Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
V(BR)CBO V(BR)CEO V(BR)CER
IC = -10A, IE = 0 IC = -100A, IB = 0 IC = -100A, RB = 10k IE = -10A, IC = 0 VCE = -6V, IB = 0 VCB = -8V, IE = 0 VEB = -1V, IC = 0
A A A B A A B B
12 4 11 -5 -5 15 15 15 15 15 15 15 -
21 14 23 5 TBD 1 150 850 1 1 2 40 47 52 47 53 57 1 24 -1.4
5 5 250 1000 6 6 6 125 125 125 125 125 125 8 -
V V V V nA nA pA nA mV mV mV mV mV
Emitter-to-Base Breakdown Voltage (Note 4) Collector-Cutoff-Current Collector-Cutoff-Current Emitter-Cutoff-Current Collector-to-Collector Leakage Collector-to-Emitter Saturation Voltage Base-to-Emitter Voltage Q1 to Q2 Base-to-Emitter Voltage Match
V(BR)EBO ICEO ICBO IEBO
VCE(SAT) VBE VBE
IC = -10mA, IB = -1mA IC = -10mA, VCE = -2V IC = -10mA, VCE = -2V IC = -1mA, VCE = -2V IC = -0.1mA, VCE = -2V
A A A A A A A A A A A A A C
DC Forward-Current Transfer Ratio
hFE
IC = -10mA, VCE = -2V IC = -1mA, VCE = -2V IC = -0.1mA, VCE = -2V IC = -10mA, VCE = -5V IC = -1mA, VCE = -5V IC = -0.1mA, VCE = -5V
Q1 to Q2 Current Gain Match Early Voltage Base-to-Emitter Voltage Drift
hFE VA
-1mA IC -10mA, -1V VCE -5V IC = -1mA, VCE = -3V IC = -10mA
% V mV/oC
4-452
HFA3134, HFA3135
Electrical Specifications
TA = 25oC TEST LEVEL (NOTE 3)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
DYNAMIC CHARACTERISTICS FOR HFA3135 (PNP) Noise Figure NF f = 900MHz, IC = -10mA, -1V VCE -5V, ZS = 50 f = 900MHz, IC = -1mA, -1V VCE -5V, ZS = 50 Current Gain-Bandwidth Product Power Gain-Bandwidth Product Base-to-Emitter Capacitance Collector-to-Base Capacitance NOTES: 3. Test Level: A. Production Tested; B. Typical or Guaranteed Limit Based on Characterization; C. Design Typical f+++++++++++++or Information Only. 4. Measuring VEBO can degrade the transistor hFE and hFE match. 5. See Typical Performance Curves for more information. fT fMAX IC = -10mA, VCE = -5V IC = -10mA, VCE = -5V VBE = 0.5V VCB = -3V B B B B B B 5.2 4.6 7 TBD 550 400 dB dB GHz GHz fF fF
Typical Performance Curves
20 18 COLLECTOR CURRENT (mA) 16 14 12 10 8 6 4 2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2
TA = 25oC, Unless Otherwise Specified
IB = 200A
COLLECTOR CURRENT AND BASE CURRENT (A)
100m 10m Q1 1m 100 10 1 100n 10n 1n 100p 10p 0.4 0.5 0.6 0.8 0.7 0.9 BASE TO EMITTER VOLTAGE (V) IB IC Q2
Q1 Q2
IB = 160A
IB = 120A
IB = 80A
Q1 Q2
IB = 40A
3.5
4.0
4.5
5.0
1.0
COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. NPN COLLECTOR CURRENT vs COLLECTOR TO EMITTER VOLTAGE
FIGURE 2. NPN COLLECTOR AND BASE CURRENTS vs BASE TO EMITTER VOLTAGE
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HFA3134, HFA3135 Typical Performance Curves
130 120 110 100 DC CURRENT GAIN 90 80 70 60 50 40 30 20 1n 1n 100n 1 10 100 1m 10m 100m 0.1 1 10 100 Q2 VCE = 3V VCE = 1V Q2 Q1 Q1 VCE = 5V GAIN BANDWIDTH (GHz) 10 9 8 7 6 5 4 VCE = 1V 3 2 1 VCE = 5V VCE = 3V
TA = 25oC, Unless Otherwise Specified (Continued)
COLLECTOR CURRENT (A)
COLLECTOR CURRENT (mA)
FIGURE 3. NPN DC CURRENT GAIN vs COLLECTOR CURRENT
FIGURE 4. NPN GAIN BANDWIDTH PRODUCT vs COLLECTOR CURRENT
1n COLLECTOR = OPEN EMITTER LEAKAGE CURRENT (A)
100p
10p
1p
0.1p
0
-0.3
-0.6
-0.9
-1.2
-1.5
-1.8
-2.1
-2.4
-2.7
-3.0
BASE TO EMITTER VOLTAGE (V)
FIGURE 5. NPN EMITTER CUTTOFF CURRENT vs BASE TO EMITTER VOLTAGE
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029
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